The self-aligned, ion-implanted structure consists of a drain, a gate, and a source, which sit on top of a second layer of n-type gallium arsenide-the recess-gate structure. The well lets electrons move quickly without colliding with impurities. Using different bandgap materials causes a quantum well to form in the superlattice.

The superlattice, which acts as a diode, forms between the layers of n-type gallium arsenide (a highly doped narrow bandgap) and aluminum gallium arsenide (a nondoped narrow bandgap). The HEMT consists of thin layers of semiconductors-n-type gallium arsenide and aluminum gallium arsenide-as well as a heterojunction superlattice a self-aligned, ion-implanted structure and a recess gate structure. Administered by the IEEE History Center and supported by donors, the Milestone program recognizes outstanding technical developments around the world. The IEEE Tokyo Section sponsored the Milestone. The HEMT was dedicated an IEEE Milestone on 18 December. The invention now powers cellphones, satellite television receivers, and radar equipment. His HEMT used a heterojunction superlattice to enhance electron mobility, improving on speed and performance.

In 1979 he invented the high-electron-mobility transistor. The superlattices, which used a modulation-doping technique to spatially separate conduction electrons and their parent donor impurity atoms, inspired Mimura to create a new transistor. He came across an article in the Applied Physics Letters journal on heterojunction superlattices -structures of two or more semiconductors of significantly different bandgaps-developed by Bell Labs in Holmdel, N.J.

Mimura began to research an alternative semiconductor to the silicon used in the MOSFET, hoping it would be the solution. The MOSFET, which had been invented in 1966, was the fastest transistor available at the time, but Mimura and other engineers wanted to make it even quicker by enhancing electron mobility-how speedily electrons could move through semiconducting material. THE INSTITUTEWhile working as an electronics engineer in 1977 at Fujitsu Laboratories in Atsugi, Japan, IEEE Life Fellow Takashi Mimura began researching how to make the metal-oxide-semiconductor field-effect transistor quicker.

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